Guerilla acquired all previously released components as well as new cores under development at Gallium Semiconductor.

Additionally, all associated IP has been transferred to Guerrilla as part of this portfolio acquisition.

“As the company continues to evolve as an RFIC and MMIC supplier, integrating GaN technology into our expanding portfolio is imperative,” says Guerrilla CEO Ryan Pratt,  “GaN represents a pivotal advancement towards offering comprehensive signal chains for our target markets. Prior to this acquisition, Guerrilla RF was already advancing GaN device development as part of its organic growth strategy. The acquisition of Gallium Semiconductor’s portfolio significantly accelerates this strategic initiative.”

“Guerrilla RF will inherit a diverse range of released and sampling products, encompassing simple, unmatched transistors to fully integrated asymmetric Doherty PAs,” says Gallium Semiconductor CEO Henk Thoonen, “with rated peak power levels ranging from 5W to 400W, these products complement Guerrilla RF’s existing portfolio of InGaP HBT and GaAs pHEMT amplifiers which are suited for power levels of 2W and below.”