Infineon announces the opening of a new plant in Malaysia, which will become the world’s largest and most competitive 200-millimeter silicon carbide (SiC) power semiconductor plant.
The high-performance 200-mm SiC power plant will reinforce Infineon’s role as a world leader in semiconductors.
The first phase of the plant, with an investment volume of two billion euros, will focus on the production of silicon carbide power semiconductors and will include gallium nitride (GaN) epitaxy.
The second phase will involve an investment of up to five billion euros. In all, up to 4,000 jobs will be created by the project.
SiC semiconductors increase the efficiency of electric vehicles, fast-charging stations and trains, as well as renewable energy systems and AI data centers.
‘ New generations of power semiconductors based on innovative technologies such as silicon carbide are an absolute prerequisite for decarbonization and climate protection. ‘, said Jochen Hanebeck, CEO of Infineon Technologies.
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