Singapore-based Liberal Scientific Technologies is poised to make a major impact in the Indian market with its advanced power semiconductor technologies. By introducing Silicon Carbide (SiC) and Gallium Nitride (GaN) production capabilities, the company seeks to bolster India’s position as a semiconductor leader. This development promises to enhance India’s self-sufficiency in power electronics, critical components for telecommunications, and high-performance computing technology. SiC and GaN semiconductors, known for their reliability in extreme conditions, will support advancements in electric vehicle fast-charging, space industry applications, and next-generation telecommunications like 6G and IoT. Additionally, these technologies will improve computing efficiency with faster, smaller CPUs, and enable solar panels to achieve over 50% efficiency while remaining durable in varying temperatures. Liberal Scientific Technologies is also advancing spintronics-based devices, paving the way towards quantum computing.
Advancements in semiconductor technology have pushed silicon (Si) to its theoretical limits. Current Si-based power devices struggle to meet the demands of modern applications, which require higher blocking voltages, switching frequencies, efficiency, and reliability. To address these challenges, new semiconductor materials like SiC and GaN, with their superior electrical properties, are emerging as the preferred alternatives for high-power applications.
Liberal Scientific Technologies has pioneered the production of high-quality semiconductor device heterostructures on silicon substrates. The company has developed a groundbreaking method and created a substrate wafer that facilitates the rapid growth of high-quality thin films of III-N materials. This process involves replacing silicon matrix atoms with carbon atoms to form silicon carbide molecules, gradually transforming the silicon body into a nano-silicon carbide film without destroying its crystal structure.
The company has successfully produced thick layers of Aluminum Nitride (AlN), GaN, and their AlGaN solid solutions without cracks. This method also allows for the creation of III-N heterostructures with low residual stresses, enabling the development of device structures based on thick III-N layers without using bulk SiC and Al2O3 substrates. These heterostructures can be used in X-ray detectors, LEDs, Ultraviolet injection lasers, UV detectors, and high-temperature transistors.
Liberal Scientific Technologies has achieved a groundbreaking milestone by developing the world’s first semiconductor device capable of emitting terahertz (THz) radiation. This innovative technology holds significant promise for diverse applications, including advanced medical treatments for conditions such as pneumonia and diabetes, as well as enhancing security systems and remote material analysis. The device’s high-power THz emissions are expected to revolutionize fields like spectroscopy and material analysis, offering new possibilities in both scientific research and practical applications.
With over a decade of scientific development and a deep understanding of semiconductor physics, Liberal Scientific Technologies has developed an affordable technology for producing high-quality device structures based on SiC and GaN. Despite significant investments in the industry, no other company has successfully produced these materials economically. Liberal Scientific Technologies proudly claims to be the only organization to propose a viable method for producing SiC and GaN structures.
This strategic entry into the Indian market by Liberal Scientific Technologies is poised to transform the country’s semiconductor landscape, driving innovation and self-reliance in critical technology sectors.
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