NEO Semiconductor develops 3D DRAM with AI processing — new tech eyes to replace current HBM tech to solve data bus bottlenecks
semiconductor

NEO Semiconductor develops 3D DRAM with AI processing — new tech eyes to replace current HBM tech to solve data bus bottlenecks

NEO Semiconductor, focusing on 3D NAND flash memory and 3D DRAM, announced 3D X-AI chip technology to replace the HBMs currently used in AI GPU accelerators. This 3D DRAM has built-in AI processing that lets it process and generate outputs that do not require mathematical calculations. It reduces the data bus bottleneck problems when massive amounts of data are transferred between the memory and processor, increasing AI performance and efficiency.

The 3D X-AI chip has a neuron circuit layer at its base, which processes the data stored in the 300 memory layers on the same die. According to NEO Semiconductor, this 3D memory offers a 100-fold performance improvement due to its 8,000 neutron circuits that do AI processing in memory. It also has eight times more memory density than current HBMs and, more importantly, offers a 99% power reduction by reducing the amount of data that needs to be processed in the power-hungry GPUs.

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