SK keyfoundry Achieves Breakthrough in GaN Power Semiconductor Development
semiconductor

SK keyfoundry Achieves Breakthrough in GaN Power Semiconductor Development

SK keyfoundry has secured the main device characteristics of a 650V GaN High Electron Mobility Transistor (HEMT) device.
SK keyfoundry has secured the main device characteristics of a 650V GaN High Electron Mobility Transistor (HEMT) device.


SK keyfoundry has made significant strides in the development of Gallium Nitride (GaN) power semiconductors, a move that could reshape the landscape of the semiconductor industry.


On June 9, the company announced that it has secured the main device characteristics of a 650V GaN High Electron Mobility Transistor (HEMT) device, which outperforms traditional silicon-based semiconductors in both efficiency and durability. This development is part of SK Key Foundry’s broader strategy to complete the GaN power semiconductor development within this year.


The company has been focusing on GaN processes since forming an official team in 2022, recognizing the marketability and potential of GaN power semiconductors. GaN technology offers several advantages over traditional silicon, including higher efficiency, faster switching speeds, and greater thermal conductivity, making it particularly suitable for high-power and high-frequency applications.


According to industry sources on the 20th, SK keyfoundry’s recent advancements are set to have a significant impact on the electric vehicle (EV) market. The company will start producing power semiconductors for Tesla from the second half of this year. Starting in November, SK keyfoundry plans to produce power management chips (PMIC) at its 8-inch wafer fab in Cheongju. This move is expected to expand the company’s business areas to include fast-charging adapters, data centers, and energy storage systems (ESS), thereby enhancing collaboration with fabless clients.


The GaN power semiconductor market is projected to grow at an annual average rate of 33%, from $500 million last year to $6.4 billion by 2032, according to market research firm Omdia. This rapid growth is driven by the increasing demand for advanced power semiconductors in various applications, including electric vehicles and renewable energy systems.


Lee Dong-jae, CEO of SK keyfoundry, emphasized the company’s long-term vision, stating, “We aim to establish ourselves as a specialized power semiconductor foundry by expanding our lineup to include not only GaN but also Silicon Carbide (SiC) in the future.” SiC, like GaN, offers superior performance compared to traditional silicon, particularly in high-temperature and high-voltage applications.


Although foundries have not accounted for a significant portion of SK Hynix’s revenue so far, the development of power semiconductors could boost overall foundry sales. SK keyfoundry also provides contract manufacturing for non-memory semiconductors such as Display Driver ICs (DDI) and Microcontroller Units (MCU), further diversifying its product lineup.


The rapid growth of the electric vehicle market is a key driver for the demand for advanced power semiconductors. As electric vehicles become more prevalent, the need for efficient and durable power semiconductors will continue to rise. SK keyfoundry’s advancements in GaN technology position the company to capitalize on this growing market.

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