NCASR Researchers Advance Semiconductor Efficiency – OpenGov Asia
semiconductor

NCASR Researchers Advance Semiconductor Efficiency – OpenGov Asia

Researchers from the Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), an autonomous institute under the Department of Science and Technology (DST), have made a significant breakthrough in the semiconductor industry by unveiling new insights into the mechanisms that limit electron mobility in semiconductors.

NCASR Researchers Advance Semiconductor Efficiency – OpenGov Asia
Image credits: Press Information Bureau

This advancement promises to enhance the efficiency and performance of electronic devices, which are crucial in powering a wide array of technologies, from smartphones and computers to advanced medical devices and space exploration technologies.

As the demand for faster, more efficient, and reliable electronic devices continues to grow, the search for new semiconductor materials has intensified. One promising candidate is Scandium Nitride (ScN), a rocksalt semiconductor known for its high thermal stability, robustness, and favourable electronic properties.

However, despite its potential, the practical application of ScN in electronic devices has been hampered by relatively low electron mobility. This limitation is critical, as electron mobility directly influences the speed and efficiency of semiconductor devices.

To address this issue, the scientists, undertook research to identify the factors that impede electron mobility in ScN. Led by Associate Professor Bivas Saha, the research team focused on understanding the dominant scattering mechanisms that hinder electron flow. Through a combination of theoretical analysis and experimental validation, they were able to pinpoint the specific mechanisms at play.

Their findings indicated that interactions between electrons and longitudinal optical phonon modes, often referred to as Fröhlich interactions, set an intrinsic upper limit on the electron mobility of ScN. In addition to these interactions, the study highlighted that ionised-impurity and grain-boundary scatterings significantly reduced the overall electron mobility. To mitigate these issues, the researchers suggested that depositing single-crystalline ScN that is devoid of impurities and defects could lead to a significant increase in electron mobility.

Professor Saha emphasised the broader implications of this study for the global semiconductor industry, ”As manufacturers seek to push the boundaries of electronic device performance, the insights provided by our research could lead to significant advancements in the design and fabrication of ScN-based components.”

Lead author Sourav Rudra elaborated on the potential applications, noting that addressing the identified scattering mechanisms could enable the engineering of ScN materials with improved electron mobility, making them suitable for a variety of high-performance applications. These applications could include thermoelectric devices, neuromorphic computing, high-mobility electron transistors, and Schottky diodes.

As the semiconductor industry continues to evolve, the findings from this research are expected to serve as a foundational stepping stone for future exploration into ScN and other semiconductor materials. JNCASR’s contributions to the field are poised to make a lasting impact on the development of future technologies, aligning with India’s aspiration to become a global leader in science and innovation.

Additionally, this study also involved contributions from Prof. Samuel Poncé, a researcher at the Université catholique de Louvain in Belgium, highlighting the collaborative nature of the research.

OpenGov Asia reported that Researchers at JNCASR had advanced the understanding of incipient metals with metavalent bonding (MVB) in two-dimensional Group IV chalcogenides, which have significant implications for quantum technology and the IT sector.

These materials are already used in computer flash memories for their ability to change optical properties during phase transitions and show promise for sustainable energy solutions as phase change materials. The research enhances the understanding of these materials and opens avenues for applications in energy harvesting, storage, and advanced technologies.

The findings have been published in the journal Nano Letters, marking a crucial advancement in the quest for more efficient electronic devices. As the semiconductor industry faces increasing demands for higher performance, understanding and overcoming these challenges will be essential for the continued advancement of technology in the digital age.

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